PJC945 npn epitaxial silicon transistor 1-2 2002/01.rev.a to-92 sot-23 audio frequency amplifier high frequency os c. ? complement to pja733 ? excellent dc current gain linearly 0.1ma to 50ma low output capacitance cob=2.5pf(typ.) @v cb =6v,f=1mhz low noise figure nf=2.5db(t yp.) i c =0.1ma,v ce = 6v rg= 2k ? ,f=1khz dc current gain selection available characteristic symbol test condition min typ max unit collector-base breakdown voltage bv cbo ic = 10 a, i e = 0 80 v collector-emitter brea kdown voltage bv ceo ic =1.0ma, i b =0 50 v emitter-base brea kdown voltage bv ebo i e = _ 10 a, i c = 0 5 v collector cutoff current i cbo v cb = 45v,i e =0 0.1 a emitter cutoff current collector-cutoff current i ebo i ceo v eb =3v,i c =0 v ce =40v,i b =0 0.1 1 a a dc current gain h fe(1) h fe (2) v ce =6v,i c =0.1 ma v ce =6v,i c =1.0 ma 50 70 70 collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage v ce (sat) v be (sat) v be (on) i c =10ma,i b =1ma i c =10ma,i b =1ma i c =0.1ma,v ce =6v 0.55 0.09 0.81 0.6 0.3 1 0.65 v v v current-gain-bandwidth product f t v ce =6v,i c =10ma v cb =6v,i e =0 150 250 450 mhz output capacitance c ob f=1mh z v ce =6v,i e = _ 0.5ma 2.5 5 pf noise figure nf f=1kh z ,rs=2k ? 2.5 15 db h fe (2) classification classification r p q k h fe (2) 70-140 120-240 200-400 350-700 rating symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current ic 120 ma total device dissipation p d p d 450 1.2 mw w junction temperature tj 150 c storage temperature tstg -55 ~150 c device operating temperature package PJC945ct to-92 PJC945cx -20 +85 sot-23 absolute maximum ratings (t a = 25 c) pin : 1. base 2. emitter 3. collector pin : 1. emitter 2. colletor 3. base ordering information electrical characteristics (t a = 25 c) www.datasheet.co.kr datasheet pdf - http://www..net/
PJC945 npn epitaxial silicon transistor 2-2 2002/01.rev.a www.datasheet.co.kr datasheet pdf - http://www..net/
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